pgÂ齫ºúÁËapp¹ÙÍø

ÖÆÔìÓëЧÀÍ

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ 0.11 Ultra-low Leakage

 

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ Overview
        ¹«Ë¾ 0.11 ULL½ÓÄÉÁËÂÁ»¥Á¬¼¼Êõ£¬1P8M ¼Ü¹¹£¬Ìṩ1.5V ÄÚºËÆ÷¼þ¼°3.3V ÊäÈëÊä³öÆ÷¼þ£¬¾ß±¸³¬µÍ©µçÌص㣬Æ÷¼þÌØÕ÷Ioff (pA/um)<0.5¡£

 

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ Key Features 
- Single poly, eight-metal-layer process
- Al backend with low-K FSG material
- Device Ioff (typical) <0.5 pA/um

 

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ Applications
- MCU
- IOT


 

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ 0.11 ULL flash 

 

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ Overview
        ¹«Ë¾ 0.11 ULL flash ¹¤ÒÕÊÇ»ùÓÚ0.11 ULL¹¤ÒÕǶÈëflash, Âß¼­Æ÷¼þÓëULL¼æÈÝ¡£Ìṩ³¬µÍ¹¦ºÄÄ£ÄâIP¡£

 

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ Key Features
- Double poly, eight-metal-layer process
- Al backend with low-K FSG material
- Competitive flash macro cell size

 

PGÂ齫ºúÁË(Öйú)¹Ù·½ÍøÕ¾IOS/°²×¿Í¨Óðæ/ÊÖ»úAPPÏÂÔØ Application 
- MCU
- IOT

ÍøÕ¾µØͼ